International Topical Workshop on Heteroepitaxy of 3C-SiC on Silicon and its Application to Sensor Devices

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Veranstaltung

26.04.2005 - 01.05.2005 | Bad Schandau OT Krippen

International Topical Workshop on Heteroepitaxy of 3C-SiC on Silicon and its Application to Sensor Devices

Objective of the "International Topical Workshop on Heteroepitaxy of 3C-SiC on Silicon and its Application to Sensor Devices" (HeT-SiC-05) is to summarize and discuss important scientific and technological results of the EU-project "FLASiC" which was guided by the Forschungszentrum Rossendorf during the period 2002-2005.

Background to perform the EU-project "FLASiC" is the real danger of growing environmental pollution which forces mankind to take action by developing environmentally friendly products and technologies, and increasing efforts to protect and maintain the human life and health which is permanently exposed to that increasingly harmful environment. For that reason it is a challenging task for areas like microelectronics, biotechnology, or biomedicine to meet the growing demands for high quality electronic sensors to work at high temperatures and under extreme environmental conditions.

At present, silicon carbide (SiC) is the best candidate for such extreme applications, e.g. in sensors for controlling of exhaust gases to improve the environmental conditions, sensor-carrying needles and other devices for biomedical applications.

The current situation in the SiC microelectronics technology is dominated by wafers of the hexagonal polytypes 4H- and 6H-SiC. However, the market for SiC-based devices remains very small due to (i) the high costs of the SiC wafers, and (ii) the deviation of the SiC devices parameters from the theoretical expectations due to the low effective carrier mobility.

Cubic 3C-SiC should exhibit the highest mobility of all SiC polytypes, but it is not available in the same wafer size as the hexagonal polytypes. Moreover, epitaxially grown 3C-SiC/Si has the advantage of low cost and larger wafers.

In five sessions at the Workshop HeT-SiC, namely (1) "Growth", (2) "Deposition", (3) "Processing and Characterization", (4) "Sensors and Devices", and (5) "Future Direction" about 40 specialists from Europe and Japan will present and discuss their results and conclude about further efforts to continue this work.

http://www.fz-rossendorf.de (see News/Workshops)

Hinweise zur Teilnahme:
registration required (see website)

Weitere Informationen:

http://www.fz-rossendorf.de

Termin:

26.04.2005 - 01.05.2005

Veranstaltungsort:

Hotel Erbgericht Krippen
Bächelweg 4
01814 Bad Schandau OT Krippen
Sachsen
Deutschland

Zielgruppe:

Wirtschaftsvertreter, Wissenschaftler

E-Mail-Adresse:

g.brauer@fz-rossendorf.de; W.Skorupa@fz-rossendorf.de

Relevanz:

international

Sachgebiete:

Biologie, Mathematik, Meer / Klima, Physik / Astronomie, Umwelt / Ökologie, Werkstoffwissenschaften

Arten:

Eintrag:

18.04.2005

Absender:

Annette Weißig

Abteilung:

Kommunikation und Medien

Forschungszentrum Dresden-Rossendorf

Veranstaltung ist kostenlos:

nein

Textsprache:

Englisch

URL dieser Veranstaltung: http://idw-online.de/de/event13826