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Image for: Advanced imaging techniques on a semiconductor material reveal ‘surprising’ hidden activity


a:Schematic of in-operando synchrotron X-ray setup b:Voltage vs. time of applied pulse & voltage drop across resistor c:Time-resolved shifts in Bragg peak during IMT in x-direction & y–z plane at ≈26° angle d:Lattice distortion schematic across VO2 channel
a:Schematic of in-operando synchrotron X-ray setup b:Voltage vs. time of applied pulse & voltage drop across resistor c:Time-resolved shifts in Bragg peak during IMT in x-direction & y–z plane at ≈26° angle d:Lattice distortion schematic across VO2 channel

Credit: Advanced Materials (2024). DOI: 10.1002/adma.202312673

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