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Image for: New semiconductor material: AlYN promises more energy-efficient and powerful electronics


Researchers at Fraunhofer IAF have succeeded in growing AlYN/GaN heterostructures in a MOCVD reactor on 4-inch SiC substrates.
Researchers at Fraunhofer IAF have succeeded in growing AlYN/GaN heterostructures in a MOCVD reactor on 4-inch SiC substrates.

Fraunhofer IAF

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